The Intel Foundry Technology Research team has recently announced significant advancements in 2D transistor technology, chip-to-chip interconnects, and packaging technology. These breakthroughs will be showcased in several research papers at the IEEE International Electron Devices Meeting (IEDM) 2024. Let’s explore the key innovations presented by Intel’s research team.
Breakthrough in Scaling Interconnections
As transistors continue to shrink in size, the challenge lies in scaling down the wires that connect them. Copper has been the preferred material for these nanometer-scale wires, but limitations in shrinking them further have surfaced. Intel has introduced ruthenium technology and air gaps to address these challenges, offering improved interconnect performance and scalability.
The integration of ruthenium and air gaps in the manufacturing process has shown promising results in enhancing capacity and reducing resistance. This innovative approach paves the way for more efficient chip designs with smaller wire sizes, enabling better connectivity between transistors.
Breakthrough in GAA Transistors
Intel’s RibbonFET design represents a significant leap in transistor technology, particularly in the Gate-All-Around (GAA) transistors. With stacked nanosheets fully surrounded by a gate, this design offers improved performance and scalability compared to traditional FinFETs.
By focusing on both standard silicon and new 2D materials, Intel aims to further enhance GAA designs. The utilization of atomically thin transition metal dichalcogenide (TMD) materials showcases Intel’s commitment to exploring post-silicon materials for future transistor advancements.
Breakthroughs in Packaging
Intel’s Selective Layer Transfer Technology (SLT) is revolutionizing chip packaging by enabling high-speed chip-to-chip assembly with a 100-fold increase in throughput. This innovative approach allows for greater flexibility in chiplet design and assembly, leading to smaller die sizes and improved form factors.
Additionally, Intel’s EMIB-T technology, utilizing Through-Silicon Vias (TSV), represents a novel approach to interconnecting modules with low latency and high bandwidth. These advancements in packaging solutions are poised to reshape the future of chip assembly and integration.
FAQs
What are the key technologies Intel has recently announced?
Intel has introduced advancements in 2D transistor technology, chip-to-chip interconnects, and packaging technology, showcasing breakthroughs in scaling and performance.
How does Intel address the challenges of shrinking interconnect wires?
Intel has implemented ruthenium technology and air gaps in the manufacturing process to enhance interconnect performance and scalability, enabling smaller wire sizes and better transistor connectivity.
What is the significance of Intel’s RibbonFET design?
Intel’s RibbonFET design represents a major advancement in GAA transistors, offering improved performance and scalability with stacked nanosheets fully surrounded by a gate.
What innovative packaging technologies has Intel introduced?
Intel’s SLT technology enables high-speed chip-to-chip assembly, while EMIB-T technology utilizes TSV for interconnecting modules with low latency and high bandwidth, revolutionizing chip packaging solutions.
Credit: herosweb.com
